Differential Negative Resistance of n-Type Inversion Layer in Silicon MOS Field-Effect Transistor
- 1 January 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 20 (1), 31-33
- https://doi.org/10.1063/1.1653968
Abstract
A new type of voltage‐controlled differential‐negative‐resistance effect was observed in an n‐type surface inversion layer of a silicon MOS field‐effect transistor with a very high mobility of 104 cm2/V sec at low temperatures.Keywords
This publication has 3 references indexed in Scilit:
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970
- Properties of Semiconductor Surface Inversion Layers in the Electric Quantum LimitPhysical Review B, 1967
- Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductorsIEEE Transactions on Electron Devices, 1966