Sn2P2S6films for memory devices with nondestructive readout
- 1 April 1992
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 1 (1), 147-150
- https://doi.org/10.1080/10584589208215571
Abstract
The polarization switching processes of ferroelectric polycrystalline Sn2P2S6 films on Al substrates were studied. The effect of full reverse spontaneous switching after the influence of a repolarizing pulse on the prepoled sample was investigated. This opens the way for making the ferroelectric memory devices with rapid nondestructive readout.Keywords
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- Vapour growth and crystal data of the thio(seleno)-hypodiphosphates Sn2P2S6, Sn2P2Se6, Pb2P2Se6 and their mixed crystalsMaterials Research Bulletin, 1974