Reversible switching in phase-change materials
Open Access
- 20 May 2008
- journal article
- review article
- Published by Elsevier in Materials Today
- Vol. 11 (6), 20-27
- https://doi.org/10.1016/s1369-7021(08)70118-4
Abstract
No abstract availableThis publication has 57 references indexed in Scilit:
- Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materialsand GeTePhysical Review B, 2007
- Highly scalable non-volatile and ultra-low-power phase-change nanowire memoryNature Nanotechnology, 2007
- Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devicesJournal of Applied Physics, 2007
- Evidence for trap-limited transport in the subthreshold conduction regime of chalcogenide glassesApplied Physics Letters, 2007
- Unravelling the interplay of local structure and physical properties in phase-change materialsNature Materials, 2005
- Low-cost and nanoscale non-volatile memory concept for future silicon chipsNature Materials, 2005
- Structural study of a quadruple compound utilized for phase-change optical disksPhysical Review B, 2001
- Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growthJournal of Applied Physics, 1995
- Near-field optical data storage using a solid immersion lensApplied Physics Letters, 1994
- Optical properties of amorphous III–V compounds. I. ExperimentPhysica Status Solidi (b), 1972