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Three-level transferred-electron effects in InP
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Three-level transferred-electron effects in InP
Three-level transferred-electron effects in InP
HR
H.D. Rees
H.D. Rees
CH
C. Hilsum
C. Hilsum
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1 January 1971
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 7
(15)
,
437-438
https://doi.org/10.1049/el:19710294
Abstract
Revised estimates of the velocity/field characteristic of InP are made in the light of recent experimental evidence. A limiting oscillator efficiency of about 30% is predicted.
Keywords
VELOCITY/FIELD CHARACTERISTIC
LIMITING OSCILLATOR EFFICIENCY
SEMICONDUCTOR MATERIAL
ELECTRON MOBILITY
INP
THREE LEVEL TRANSFERRED ELECTRON EFFECTS
BAND STRUCTURE
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Cited by 20 articles