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Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy
Home
Publications
Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy
Potential‐Enhanced Doping of Si Grown by Molecular Beam Epitaxy
RK
R. A. A. Kubiak
R. A. A. Kubiak
WL
W. Y. Leong
W. Y. Leong
EP
E. H. C. Parker
E. H. C. Parker
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1 November 1985
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 132
(11)
,
2738-2742
https://doi.org/10.1149/1.2113656
Abstract
No abstract available
Cited by 17 articles