Theoretical considerations regarding pulsed CO2 laser annealing of silicon
- 30 November 1980
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 36 (8), 671-675
- https://doi.org/10.1016/0038-1098(80)90206-9
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Annealing of phosphorus-ion-implanted silicon using a CO2 laserApplied Physics Letters, 1979
- Free carrier absorption in siliconIEEE Transactions on Electron Devices, 1978
- A review of some charge transport properties of siliconSolid-State Electronics, 1977
- Silicon Optical Constants in the InfraredJournal of the Electrochemical Society, 1971