Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
- 12 November 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (20), 2110-2112
- https://doi.org/10.1063/1.103914
Abstract
Direct evidence for interplanar relaxation in islands at the initial stages of strained epitaxy is presented using molecular beam epitaxically deposited In0.5Ga0.5As on GaAs(100). Concomitant existence of atomic displacements in the substrates to unexpectedly large depths of ∼150 Å is found. In incoherent islands, defects are found to be introduced symmetrically near the island edges.Keywords
This publication has 6 references indexed in Scilit:
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990
- Nucleation and defect generation in lattice matched and mismatched heteroepitaxial layers in the GaAs/AlxGa1−xP/Si systemJournal of Applied Physics, 1990
- Characteristics of dislocations at strained heteroepitaxial InGaAs/GaAs interfacesJournal of Applied Physics, 1989
- Kinetic aspects of growth front surface morphology and defect formation during molecular-beam epitaxy growth of strained thin filmsJournal of Vacuum Science & Technology B, 1989
- Nucleation of GaAs on Si: Experimental evidence for a three-dimensional critical transitionApplied Physics Letters, 1987
- Initial stages of epitaxial growth of GaAs on (100) siliconJournal of Applied Physics, 1987