An in situ Study of Aqueous HF Treatment of Silicon by Contact Angle Measurement and Ellipsometry

Abstract

The application of in situ ellipsometry and in situ contact angle measurement to semiconductor surfaces is introduced. It should be recognized that the techniques discussed are applicable to all semiconductor surfaces in any ambient liquid phase. Experimental and instrumental considerations for the use of these techniques are discussed as well as experimental results for analysis of silicon and silicon dioxide surfaces. These results pertain to Si surfaces in ambient aqueous and yield evidence of a fluorocarbon film present on the Si surface following etch of a film.