Effect of Growth Imperfections on the Strength of Aluminum Single Crystals
- 1 August 1956
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 27 (8), 950-954
- https://doi.org/10.1063/1.1722520
Abstract
The effect of growth imperfections on the critical resolved shear stress is investigated for high-purity (99.99+%) aluminum single crystals as compared with strain-anneal crystals. An apparatus for measuring strains of the order of 0.2 μin. is described. Using etch pits as an index, the critical resolved shear stress is found to be inversely proportional to the growth imperfections for a range of etch pit density ρ of 5 to 25×104/cm2. An elastic range is demonstrated; and prior plastic deformation is found to lower Young's modulus. The results are interpreted in terms of dislocation theory.Keywords
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