Effect of Incident Light Illumination Shape on Responsivity of GaAs MESFET Photodetector
- 1 May 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (5A), L367
- https://doi.org/10.1143/jjap.24.l367
Abstract
Photoresponsivity of a GaAs MESFET is investigated. By matching the incident light illumination shape to the electrode shape of the device, an improvement of a factor ∼3 in the photoresponsivity was observed. This suggests that the photoresponsivity of GaAs MESFET's is substantially due to a channel current caused by a direct optically-induced modulation of depletion layer.Keywords
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