Abstract
When a very good planar Ge(Li) detector (3.8 cm2 × 9 mm, ∼77°K, ∼1 kV/cm) was irradiated by a slit‐collimated 137Cs γ‐ray beam (slit width, ∼0.25 mm) incident parallel to the n+i and the i‐p junctions, a large and abrupt increase in the relative counting rate of slow rising pulses was observed near the two junctions. The slow pulses had much longer rise times (> 0.5 μsec) than those of the normal fast rising pulses whose rise times were determined by the transit times of the carriers.