Highly porous interlayer dielectric for interconnect capacitance reduction
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 337, 61-62
- https://doi.org/10.1109/vlsit.1995.520858
Abstract
Hydrogen silsesquioxane (HSQ) is a low density material for intra-metal gapfill, that offers low permittivity for interconnect capacitance reduction. Films with k as low as /spl sim/2.2 preferentially form between tightly-spaced metal leads when cured at low temperature (<400/spl deg/C), and interlayer dielectric properties are stable from 1 MHz to 1 GHz. HSQ simplifies the process integration of low-k materials for high performance interconnect applications by using standard semiconductor spin-on production techniques. Use of porous HSQ as a gapfill dielectric dramatically reduces the capacitive coupling between metal leads, resulting in higher interconnect performance.Keywords
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