Capacitance transient spectroscopy has been used to study the defect states introduced into silicon by plastic deformation at 770°C. A large variety of defect states are observed with a prominent state at E(Ec-0.68eV) after deformation. Varying the dislocation structure by a two stage deformation procedure did not change the observed capacitance spectra after deformation. Upon annealing at 900°C the spectra simplify to two dominant states at E(Ec-0.38eV) and H(Ev+0.35eV)