Chemical vapor deposition of silicon using a CO2 laser

Abstract

Chemical vapor deposition of polycrystalline silicon is reported in which a CO₂ laser is used for substrate heating. With this technique, deposition can be spatially limited to only a small portion of the substrate, and a spatial resolution of 50 μ is demonstrated. Since the reaction chamber and majority of the substrate are at much lower temperatures, premature gas phase reactions and substrate etching are avoided.