GaN HFET technology for RF applications
- 11 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
GaN HFET has emerged as a very promising device technology for next-generation microwave applications. The last several years have witnessed a tremendous progress in the development of this technology, from material growth to circuit demonstration. Devices and circuits with excellent output power, power density, efficiency, and noise figure have been achieved. This talk reviews the current status of GaN HFET technology.Keywords
This publication has 11 references indexed in Scilit:
- High Al-content AlGaN/GaN HEMTs on SiC substrates with very high power performancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High speed and high power AlGaN/GaN MODFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substratesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- GaN/AlGaN high electron mobility transistors with f of 110 GHzElectronics Letters, 2000
- AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHzElectronics Letters, 2000
- Robust low microwave noise GaN MODFETs with 0.60 dB noise figure at 10 GHzElectronics Letters, 2000
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- High performance GaN/AlGaN MODFETs grown by RF-assisted MBEElectronics Letters, 1998
- High-temperature performance of AlGaN/GaN HFETs on SiC substratesIEEE Electron Device Letters, 1997
- High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substratesElectronics Letters, 1997