High performance GaN/AlGaN MODFETs grown by RF-assisted MBE
- 1 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (3), 309-311
- https://doi.org/10.1049/el:19980198
Abstract
High performance 0.25 µm gate-length GaN/AlGaN modulation doped field effect transistors grown by RF-assisted MBE on sapphire are demonstrated. A maximum drain current of 750 mA/mm, and a breakdown voltage exceeding 45 V were obtained. Small signal measurement yielded a current gain cutoff frequency of 28 GHz, and a maximum oscillation frequency of 426 Hz. The authors have achieved < 5% variation in the maximum drain current across 2 in wafers. These results demonstrated the excellent potential of RF-assisted MBE in the growth of GaN-based microwave power devices for practical applications.Keywords
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