Mean Lives of Some States inSi31below 3.54 MeV

Abstract
A Ge(Li) detector and the reaction Si30(d, p)Si31 with Ed=24 MeV are used in the coincidence version of the Doppler-shift attenuation method to obtain the following information concerning the mean lives of some low-lying states in Si31: τ(0.75 MeV)=(7.21.8+2.6)×1013 sec, τ(1.69 MeV)=(7.4±2.3)×1013 sec, τ(2.32 MeV)<3×1013 sec, τ(3.14 MeV)=(5.02.6+2.2)×1013 sec, τ(3.53 MeV)<3.7×1014 sec. From these results, the reduced matrix elements for electromagnetic transitions among some of these states are obtained. A comparison is made between these reduced matrix elements and those predicted by the extreme single-particle model, the Nilsson rotational model, and the shell model with configuration mixing in the 2s12 and 1d32 shells. Our results indicate a value of |η|=2.80.4+0.5 for the Nilsson deformation parameter for Si31. A value of 752±1 keV was obtained for the excitation energy of the 0.75-MeV state.