Layer-by-layer and step-flow growth mechanisms in GaAsP/GaP nanowire heterostructures
- 1 November 2006
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 21 (11), 2801-2809
- https://doi.org/10.1557/jmr.2006.0341
Abstract
GaP–GaAsP segmented nanowires (NWs), with diameters ranging between 20 and 500 nm and lengths between 0.5 and 2 μm, were catalytically grown from Au particles on a GaAs (111)B substrate in a gas source molecular beam epitaxy system. The morphology of the NWs was either pencil-shaped with a tapered tip or rod-shaped with a constant diameter along the entire length. Stacking faults were observed for most NWs with diameters greater than 30 nm, but thinner ones tended to exhibit fewer defects. Moreover, stacking faults were more likely found in GaAsP than in GaP. The composition of the pencil NWs exhibited a core–shell structure at the interface region, and rod-shaped NWs resulted in planar and atomically abrupt heterointerfaces. A detailed growth mechanism is presented based on a layer-by-layer growth mode for the rod-shaped NWs and a step-flow growth mode for the tapered region of the pencil NWs.Keywords
This publication has 35 references indexed in Scilit:
- Growth Kinetics of Heterostructured GaP−GaAs NanowiresJournal of the American Chemical Society, 2006
- Hybrid Single-Nanowire Photonic Crystal and Microresonator StructuresNano Letters, 2005
- Growth mechanisms of GaAs nanowires by gas source molecular beam epitaxyJournal of Crystal Growth, 2005
- High-speed integrated nanowire circuitsNature, 2005
- Nanowire Single-Electron MemoryNano Letters, 2005
- Atomic Structure of MBE-Grown GaAs NanowhiskersPhysics of the Solid State, 2005
- Growth mechanisms for GaAs nanowires grown in CBEJournal of Crystal Growth, 2004
- Colloidal nanocrystal heterostructures with linear and branched topologyNature, 2004
- Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxyJournal of Applied Physics, 1996
- Surface diffusion and sticking coefficient of adatoms to atomic steps during molecular beam epitaxy growthJournal of Crystal Growth, 1991