Photogenerated-Charge-Carrier-Induced Surface Reaction: No on Si(111)7×7

Abstract

Photodesorption and photodissociation of NO molecularly adsorbed on Si(111)7×7 at 90 K have been observed at wavelengths in the range from the visible to near-uv. An enhancement in the photodesorption intensity with photon energies above the transition energy of the first direct band gap of Si clearly shows that photogenerated carriers in Si initiate the reactions. Detailed data analysis suggests that the reactions are induced by hot carriers.