Infrared response of lightly doped Schottky diodes
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3), 221-223
- https://doi.org/10.1063/1.89614
Abstract
The traditional hf model of a Schottky diode has been extended to include skin effect, carrier inertia, and displacement current. Above the plasma frequency, results differ considerably from those of the traditional model. The extended model helps understand recently reported detection of 10.6‐μ radiation with Ge diodes doped to only 1016 cm−3.Keywords
This publication has 5 references indexed in Scilit:
- Detection of 10-μ radiation with point-contact Schottky diodesApplied Physics Letters, 1977
- Infrared detection and mixing in heavily doped Schottky-barrier diodesJournal of Applied Physics, 1976
- Spreading Resistance as a Function of FrequencyIEEE Transactions on Microwave Theory and Techniques, 1967
- Charge carrier inertia in semiconductorsProceedings of the IEEE, 1964
- Theory and Operation of Crystal Diodes as MixersProceedings of the IRE, 1957