Growth of high-purity ZnSe by sublimation THM and the characteristics of the Y and Z deep-level emission lines
- 24 July 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 72 (1-2), 46-50
- https://doi.org/10.1016/0022-0248(85)90116-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductorsJournal of Physics C: Solid State Physics, 1984
- Liquid-Phase Epitaxial Growth of ZnSe Using Sb0.4Se0.6 as SolventJapanese Journal of Applied Physics, 1984
- The incorporation of iron impurities in cubic ZnSJournal of Crystal Growth, 1982
- Low-temperature growth of ZnSe crystalsJournal of Crystal Growth, 1982
- Excitons and polaritons in ZnSePhysical Review B, 1981
- Annealing Behavior of Oxygen‐Bound Exciton in Electron‐Irradiated ZnTePhysica Status Solidi (b), 1981
- Growth of high-purity ZnTe single crystals by the sublimation travelling heater methodJournal of Crystal Growth, 1978
- CdTe And CdTe : Hg alloys crystal growth using stoichiometric and off-stoichiometric zone passing techniquesRevue de Physique Appliquée, 1977
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972