Boron diffusion in polycrystalline silicon layers
- 1 June 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (6), 529-532
- https://doi.org/10.1016/0038-1101(75)90029-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Diffusion of Impurities in Polycrystalline SiliconJournal of Applied Physics, 1972
- Hall Mobility in Chemically Deposited Polycrystalline SiliconJournal of Applied Physics, 1971
- Properties of Polycrystalline Silicon Deposited on Silicon Nitride LayersJournal of the Electrochemical Society, 1971
- Silicon-gate technologyIEEE Spectrum, 1969
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962