Long-wavelength HgCdTe on silicon negative luminescent devices
- 28 December 2004
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (1), 011910
- https://doi.org/10.1063/1.1843280
Abstract
We have investigated the negative luminescent properties of a device fabricated from metalorganic vapor phase epitaxy grown HgCdTe on a Si substrate. The peak emission was at , and the intrinsic Auger processes were found to be very well suppressed. The low currents (minimum current density, , of at ) needed to drive these devices makes them suitable for a range of device applications.
Keywords
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