Growth of InAs1–ySby solid solutions for obtaining decreased lattice mismatch in the InAs-GaSb (AlxGa1–nSb) system
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (5), 575-580
- https://doi.org/10.1002/crat.2170180502
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964