A new approach to A.C. characterization of bipolar transistors

Publisher Website

31 August 1988

journal article
Published by Elsevier in Solid-State Electronics

Vol. 31 (8), 1269-1275
https://doi.org/10.1016/0038-1101(88)90426-1

Abstract

No abstract available

Keywords

This publication has 6 references indexed in Scilit:

Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation
IEEE Electron Device Letters, 1986
A simple regional analysis of transit times in bipolar transistors
Solid-State Electronics, 1986
Three-dimensional derivations of the bipolar reciprocity theorem and Gummel's equation
IEEE Transactions on Electron Devices, 1986
Past and Present of the Charge-Control Concept in the Characterization of the Bipolar Transistor
Published by Elsevier ,1976
Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects
IEEE Transactions on Electron Devices, 1972
A theory of transistor cutoff frequency (f_T) falloff at high current densities
IRE Transactions on Electron Devices, 1962

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