Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs
- 23 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Gradual degradation under RF overdrive of MESFETs and PHEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-electron-induced degradation of pseudomorphic high-electron mobility transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Hot-electron induced degradation in AlGaAs/GaAs HEMTsMicroelectronic Engineering, 1992