Theoretical gain of strained-layer semiconductor lasers in the large strain regime

Abstract

The theoretical gain of strained-layer semiconductor lasers is analyzed in the large strain regime based on the density-matrix method, taking into account the modification of both the valence bands and the transition dipole moments. The wave functions for the valence-band states for an arbitrary wave vector at the Gamma point in the presence of stain are derived from diagonalization of the strain Hamiltonian using the original wave functions obtained from the k-p method. These wave functions are then used to obtain the dipole moment matrix elements at the band edges, which are found to be independent of the wave vector.<>