Modeling of illumination effects on resist profiles in x-ray lithography

Abstract

Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring x-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.