A monolithic 60 GHz diode mixer in FET compatible technology
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 99-102 vol.1
- https://doi.org/10.1109/mwsym.1989.38679
Abstract
A GaAs-technology using a combination of implantation and MOCVD (metal-organic chemical vapor deposition) has been developed that allows the fabrication of Schottky mixer diodes (f/sub T/ approximately=2300 GHz), varactor diodes, and MESFETs (f/sub max/=70 GHz) on the same chip. This allows the production of millimeter-wave mixers with integrated local oscillator and intermediate frequency amplifier. A 60-GHz mixer chip, designed and fabricated using this technology, shows a conversion loss of 6.0 dB and a double sideband noise figure of 3.3 dB.Keywords
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