Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices
- 4 August 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 164 (1-4), 29-34
- https://doi.org/10.1016/s0169-4332(00)00332-9
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Fabrication and room-temperature characterization of a silicon self-assembled quantum-dot transistorApplied Physics Letters, 1998
- Theory of silicon nanostructuresApplied Surface Science, 1996
- Si Quantum Dot Formation with Low-Pressure Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor DepositionMRS Proceedings, 1996
- Mechanism of Incipient Oxidation of Bulk Chemical Vapor Deposited Si3 N 4Journal of the Electrochemical Society, 1993
- Electronic structure and optical properties of silicon crystallites: Application to porous siliconApplied Physics Letters, 1992
- Intrinsic stress and stress gradients at the SiO2/Si interface in structures prepared by thermal oxidation of Si and subjected to rapid thermal annealingJournal of Vacuum Science & Technology B, 1989
- SiO2 film stress distribution during thermal oxidation of SiJournal of Vacuum Science & Technology B, 1988
- The Nucleation of CVD Silicon on SiO2 and Si3 N 4 Substrates: III . The System at Low TemperaturesJournal of the Electrochemical Society, 1981