Lattice theory of crystal surface melting

Abstract

We have developed a lattice theory capable of providing, within certain mean-field restrictions, a realistic description of the surface-initiated melting taking place at a low-index crystal-vapor interface near the bulk triple-point temperature ${\mathrm{T}}_{\mathrm{M}}$. Direct application is presented to the (100) and (110) surfaces of an fcc Lennard-Jones crystal. A quasiliquid layer of thickness growing like (${\mathrm{T}}_{\mathrm{M}}$-T${)}^{\mathrm{-}1/3}$ is found, in good qualitative agreement with recent experiments on Ar films.