Alpha-particle-induced field and enhanced collection of carriers
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (2), 31-34
- https://doi.org/10.1109/edl.1982.25467
Abstract
A simple physical model explains all the characteristics of the newly discovered funnelling phenomenon. An alpha strike results in significant field in the quasi-neutral regions to a depth that is equal to 1 + µ _{n} /µ _{p} times the depletion region width of an n+/p junction. This and the predicted current waveform agree with experiments and simulation results. The model also predicts the effects of the angle of alpha incidence, and that p+/n junctions should exhibit weaker funnelling phenomenon.Keywords
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