Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators

1 January 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (5), 242-243
https://doi.org/10.1049/el:19860166

Abstract

The first successful monolithic integration of InGaAsP/InP distributed feedback (DFB) lasers and InGaAs/InAlAs multiple quantum well (MQW) optical modulators using LPE (liquid phase epitaxy)/MBE (modlecular beam epitaxy) hybrid growth reported. A 14% light output modulation is observed in this integrated device.

Keywords

INTEGRATED OPTOELECTRONICS
SEMICONDUCTOR LASERS
MOLECULAR BEAM EPITAXY
LIQUID PHASE EPITAXY
MONOLITHIC INTEGRATION
MQW OPTICAL MODULATORS
HYBRID GROWTH
INGAASP/INP
DISTRIBUTED FEEDBACK
LPE
SEMICONDUCTOR GROWTH
INGAAS/INALAS
MBE
III-V SEMICONDUCTORS
DFB LASERS
MULTIPLE QUANTUM WELL

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