Optical properties of laser-type gallium arsenide
- 27 March 1972
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 38 (7), 537-538
- https://doi.org/10.1016/0375-9601(72)90806-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electromagnetic theory of heterostructure injection lasersSolid-State Electronics, 1971
- Influence of Impurities on the Optical Absorption Edge of Gallium Arsenide from 297° to 4°KJournal of the Optical Society of America, 1968
- Absorption Edge of Impure Gallium ArsenidePhysical Review B, 1965
- Refractive Index of GaAsJournal of Applied Physics, 1964
- Dispersion of the Index of Refraction Near the Absorption Edge of SemiconductorsPhysical Review B, 1964
- Infrared Transmission and Fluorescence of Doped Gallium ArsenidePhysical Review B, 1964
- Absorption Data of Laser-Type GaAs at 300° and 77°KJournal of Applied Physics, 1964
- Dispersion of the Refractive Index near the Fundamental Absorption Edge in PbSPhysical Review B, 1963
- Absorption Edge in Degenerate p-Type GaAsJournal of Applied Physics, 1962
- Reflectivity and Optical Constants of Indium Arsenide, Indium Antimonide, and Gallium ArsenidePhysical Review B, 1961