Thermoelectric Effect of Hot Carriers in Semiconductors with Nonparabolic Energy Bands
- 1 April 1970
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (5), 2241-2243
- https://doi.org/10.1063/1.1659194
Abstract
An analytical investigation of the thermoelectric effect of hot carriers in semiconductors with non‐parabolic energy bands and spherical energy surfaces has been carried out. The analysis is good for moderately high intensities of the applied electric field. Some numerical results, particularly applicable to indium arsenide and indium antimonide, are presented at the end.Keywords
This publication has 4 references indexed in Scilit:
- Hot-carrier distribution function in nonparabolic energy bandsJournal of Physics and Chemistry of Solids, 1967
- ``Thermoelectric Effect'' of Hot CarriersJournal of Applied Physics, 1965
- High-Field Conductivity in Germanium and Silicon at Microwave FrequenciesJournal of Applied Physics, 1961
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957