High performance GaN linear array
- 1 January 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (14), 1324-1325
- https://doi.org/10.1049/el:19960868
Abstract
A 1 × 16 GaN linear array is reported using a metal-semiconductor-metal structure. The array showed a very high responsivity of 3250 A/W at 360 nm under an applied bias of 10 V, and a response time of 0.5±0.2 ms. The responsivity has more than three orders of magnitude difference between the UV region and the visible region. The array also shows a very good uniformity.Keywords
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