Acoustic-Wave Detection via a Piezoelectric Field-Effect Transducer

15 February 1972

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 20 (4), 156-158
https://doi.org/10.1063/1.1654089

Abstract

An oriented piezoelectric film has been incorporated in the insulator region of a silicon insulated‐gate field‐effect transistor to provide a sensitive high‐frequency strain transducer. With this device, strains as low as 10⁻⁸ have been detected and gauge factors of roughly 7000 have been attained for applied ac strains at 5.6 MHz.

Keywords

SUP
SILICON INSULATED
INSULATOR REGION
ORIENTED PIEZOELECTRIC
EFFECT TRANSDUCER
AC STRAINS
ACOUSTIC WAVE

This publication has 2 references indexed in Scilit:

A metal-insulator-piezoelectric semiconductor electromechanical transducer
IEEE Transactions on Electron Devices, 1965
TRANSDUCER ACTION IN A METAL-INSULATOR-PIEZOELECTRIC-SEMICONDUCTOR TRIODE
Applied Physics Letters, 1965

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