Quantum-Confined Stark Effect in Stepped-Potential Quantum Wells
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A), L1663
- https://doi.org/10.1143/jjap.29.l1663
Abstract
A multi-quantum well pin diode which contains quantum wells where the band gap changes in a steplike manner along the growth direction has been grown by molecular beam epitaxy. The quantum-confined Stark effect has been observed by photocurrent spectroscopy at room temperature, and a larger red shift of the lowest exciton absorption peak in comparison with the conventional rectangular-shaped quantum well has been observed under a considerably large amount of applied electric field.Keywords
This publication has 17 references indexed in Scilit:
- Observation of Quantum-Confined Stark Effect in a Graded-Gap Quantum WellJapanese Journal of Applied Physics, 1989
- Large Stark effects for transitions from local states to global states in quantum well structuresIEEE Journal of Quantum Electronics, 1989
- Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wellsApplied Physics Letters, 1989
- Symmetric self-electrooptic effect device: optical set-reset latch, differential logic gate, and differential modulator/detectorIEEE Journal of Quantum Electronics, 1989
- Electric field dependence of exciton transition energies in GaAs-As quantum wells studied by photocurrent spectroscopyPhysical Review B, 1988
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Electronic structure of an isolated GaAs-GaAlAs quantum well in a strong electric fieldPhysical Review B, 1985
- Electroabsorption on room-temperature excitons in InGaAs/InGaAlAs multiple quantum-well structuresElectronics Letters, 1985
- Optical Absorption of GaAs-AlGaAs Superlattice under Electric FieldJapanese Journal of Applied Physics, 1985