Effects of base doping and width on the JV characteristics of the n+−n−p+ structure
- 31 March 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (3), 303-310
- https://doi.org/10.1016/0038-1101(72)90085-8
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- A self-consistent iterative scheme for one-dimensional steady state transistor calculationsIEEE Transactions on Electron Devices, 1964
- The Theory ofp-nJunctions in Semiconductors andp-nJunction TransistorsBell System Technical Journal, 1949