Drift-Velocity Saturation of Holes in Si Inversion Layers
- 1 December 1971
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 31 (6), 1846
- https://doi.org/10.1143/jpsj.31.1846
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Hot Electron Effects and Saturation Velocities in Silicon Inversion LayersJournal of Applied Physics, 1970
- Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon SurfacesJapanese Journal of Applied Physics, 1969
- Hot Electrons in Germanium and Ohm's LawBell System Technical Journal, 1951