Dynamical analysis of low-energy electron diffraction intensities from GaAs(110)--Sb(1 ML)
- 15 July 1982
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (2), 803-814
- https://doi.org/10.1103/physrevb.26.803
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
- LEED-AES-TDS characterization of Sb overlayers on GaAs(110)Surface Science, 1982
- Elastic low-energy electron diffraction from GaAs(110)-p(1×1)-Sb(1 ML)Journal of Vacuum Science and Technology, 1982
- Dynamical analysis of low-energy-electron-diffraction intensities from CdTe(110)Physical Review B, 1981
- Models of column III and V elements on GaAs (110): Application to MBEJournal of Vacuum Science and Technology, 1981
- Atomic geometry of Al−GaAs interfaces: GaAs (110)–p(1 × 1)–Al(ϑ), 0?ϑ?8.5 monolayersJournal of Vacuum Science and Technology, 1981
- Dynamical analysis of low-energy-electron-diffraction intensities from GaP(110)Physical Review B, 1981
- Atomic Geometry of GaAs(110)--AlPhysical Review Letters, 1981
- Column III and V elements on GaAs (110): Bonding and adatom-adatom interactionJournal of Vacuum Science and Technology, 1980
- Dynamical calculation of low-energy electron diffraction intensities from GaAs(110): Influence of boundary conditions, exchange potential, lattice vibrations, and multilayer reconstructionsPhysical Review B, 1979
- A Simplification of the Hartree-Fock MethodPhysical Review B, 1951