Doped hydrogenated amorphous silicon films by laser-induced chemical vapor deposition

Abstract

We report the growth and characterization of both n‐type and p‐type doped hydrogenated amorphous silicon films prepared by laser‐induced chemical vapor deposition. For both doping types, the activation energy for electrical conduction has been reduced to below 0.2 eV and controlled doping has been achieved. Phosphine lowers the growth rate, while diborane has essentially no effect on the laser‐induced growth but enhances thermal growth. Diborane also decreases the hydrogen concentration of the films, resulting in reduced optical gaps.