High-purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer
- 1 December 1985
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (11), 4452-4454
- https://doi.org/10.1063/1.336277
Abstract
High‐purity Al0.3Ga0.7As is grown by molecular beam epitaxy at a high substrate temperature using a superlattice buffer layer in order to trap residual impurities. The unintentionally doped layer is p type with p < 5×1014 cm−3. Photoluminescence spectra at 10 K showed the strong bound‐exciton emission to be 3.8 meV wide and extremely weak emission due to residual C and Si. Photoluminescence spectra of successively grown single‐quantum wells with different widths demonstrate that residual C and Si are mainly trapped at the interface of the first‐grown well.Keywords
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