Transient enhanced diffusion of ion-implanted boron in Si during rapid thermal annealing

Abstract

Transient enhanced diffusion of ion-implanted boron at a dose of 1014 cm−2 during rapid thermal annealing has been studied. The boron diffusion coefficient of the enhanced diffusion arising from implantation damage decreases with time t in the form of D0 exp(−t/τ), where D0 is the diffusion coefficient at t=0 and τ is the lifetime of the point defect causing the enhanced diffusion. The temperature dependence of D0 and τ is revealed, and the point defect causing the transient enhanced diffusion is shown to be a vacancy. It is shown that final profile broadening due to the enhanced diffusion is smaller for higher temperatures. Furthermore, it is found that both D0 and τ increase with an increase in implantation energy.