Direct observation of epitaxial islands of Pd2Si on (001) Si
- 1 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (1), 51-53
- https://doi.org/10.1063/1.91844
Abstract
The formation of epitaxial islands of Pd2Si is reported on (001) Si. These islands are several microns in dimension and distributed heterogeneously in a fine‐grained layer of the same phase. Crystallographic analysis suggests that they nucleate on {111} Si and then grow parallel to the substrate surface.Keywords
This publication has 2 references indexed in Scilit:
- An Investigation of the Structure of Pd[sub 2]Si Formed on SiJournal of the Electrochemical Society, 1974
- The growth and transformation of Pd2Si on (111), (110) and (100) SiThin Solid Films, 1973