Dynamic Measurement of Electron Energy Relaxation in InSb
- 13 October 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 23 (15), 848-851
- https://doi.org/10.1103/physrevlett.23.848
Abstract
We have measured the time dependence of the hot-electron current following a step variation in the applied electric field in -InSb at 4.2°K. We obtain the average electron energy as a function of electric field, as well as the energy dependence of both the mobility and the energy relaxation rate.
Keywords
This publication has 9 references indexed in Scilit:
- Quantum-Transport Theories and Multiple Scattering in Doped Semiconductors. I. Formal TheoryPhysical Review B, 1967
- Electron-phonon interactions at low temperatures in n-type InSbProceedings of the Physical Society, 1967
- On the Electron Gas Energy Relaxation Mechanisms in n‐Type InSb at Helium TemperaturesPhysica Status Solidi (b), 1966
- Energy exchange between hot carriers and the lattice in indium antimonideProceedings of the Physical Society, 1965
- Phonon Drag and Phonon Interactions in-InSbPhysical Review B, 1965
- Quantum Theory of Lattice-Wave Amplification in SemiconductorsPhysical Review B, 1965
- Energy Exchange between Hot Carriers and the Lattice in Indium AntimonideProceedings of the Physical Society, 1963
- Free-Carrier Infrared Absorption and Determination of Deformation-Potential Constant in n-type InSbJournal of the Physics Society Japan, 1963
- Quadratic Deviations from Ohm's Law in-Type InSbPhysical Review B, 1960