Electron dynamics in nearly pinched-off GaAs field effect transistor operation
- 1 May 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (9), 756-758
- https://doi.org/10.1063/1.91640
Abstract
Using a simplified Monte Carlo simulation of a transverse section of a GaAs field effect transistor, it is shown that for nearly pinched‐off operation, electron dynamics strongly depends on the transverse electric field acting on the electrons and also that the classical theoretical treatment based on the electron velocity equations cannot be used to take this effect into account.Keywords
This publication has 3 references indexed in Scilit:
- Current-voltage characteristics, small-signal parameters, and switching times of GaAs FET'sIEEE Transactions on Electron Devices, 1978
- Drain conductance of junction gate FET's in the hot electron rangeIEEE Transactions on Electron Devices, 1976
- Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect TransistorsPublished by Elsevier ,1975