Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputtering

Abstract
Ferroelectric (Pb,La)(Zr,Ti)O3 (PLZT) thin films have been epitaxially grown on the c plane of sapphire by rf‐planar magnetron sputtering. The sputtering conditions were investigated to obtain epitaxial and transparent films. Dielectric, piezoelectric, and electro‐optic properties of the films were measured. Piezoelectricity of the PLZT(28/0/100) film was confirmed and was as strong as that of BaTiO3. Excellent quadratic electro‐optic effects for PLZT(28/0/100) and PLZT(9/65/35) films and a linear electro‐optic effect for PLZT(21/0/100) film were observed at 0.633‐μm wavelength. Epitaxial PLZT thin film on sapphire is presently the most promising material for new functional devices.