Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

Abstract

High-efficiency amber InGaN single-quantum-well (SQW) structure light-emitting diodes (LEDs) with a luminous efficiency of 10 lm/W were developed. At a current of 20 mA, the external quantum efficiency, the output power and the emission wavelength of the amber InGaN SQW structure LEDs were 3.3%, 1.4 mW and 594 nm, respectively. The output power of InGaN LEDs was about twice as high as that of AlInGaP LEDs. There was a large difference in the temperature dependence of the output power between InGaN and AlInGaP LEDs. When the ambient temperature was increased from room temperature to 80°C, the output power of AlInGaP LEDs decreased dramatically. On the other hand, the output power of the InGaN LEDs remained almost constant.