Flexible Complementary Logic Gates Using Inkjet-Printed Polymer Field-Effect Transistors
- 10 December 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 34 (1), 126-128
- https://doi.org/10.1109/led.2012.2226556
Abstract
High-performance inkjet-printed top-gate/bottom-contact organic field-effect transistors (OFETs) and complementary electronic circuitry are reported. Blends of poly(vinylidenefluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(methyl methacrylate) (PMMA) dielectrics effectively reduce the operation voltage. At the optimized blend ratio of 7 : 3 wt.% for P(VDF-TrFE) and PMMA, both p- and n-type printed OFETs show well-balanced high field-effect mobility values (~ 0.5 cm2/V·s) and low threshold voltages ( ±5 V). The high-performance inverters and various digital logic gates such as nand, nor, or, and xor are demonstrated on flexible plastic substrates. The inverter shows a high gain (>; 25), an ideal inverting voltage near half of the supplied bias (1/2VDD), and a high noise immunity (up to 79 % of 1/2VDD).Keywords
This publication has 15 references indexed in Scilit:
- Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary CircuitsACS Applied Materials & Interfaces, 2012
- Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic CircuitsAdvanced Materials, 2012
- Highly Soluble Poly(thienylenevinylene) Derivatives with Charge-Carrier Mobility Exceeding 1 cm2V–1s–1Chemistry of Materials, 2011
- n-Channel Semiconductor Materials Design for Organic Complementary CircuitsAccounts of Chemical Research, 2011
- All inkjet-printed, fully self-aligned transistors for low-cost circuit applicationsOrganic Electronics, 2011
- High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductorsJournal of Polymer Science Part B: Polymer Physics, 2010
- Air-Stable Solution-Processed Hybrid Transistors with Hole and Electron Mobilities Exceeding 2 cm2 V−1 s−1Advanced Materials, 2010
- Organic Transistors in Optical Displays and Microelectronic ApplicationsAdvanced Materials, 2010
- Material characteristics and applications of transparent amorphous oxide semiconductorsNPG Asia Materials, 2010
- Large-scale complementary integrated circuits based on organic transistorsNature, 2000